Semiconductor Devices as Track Detectors in High Energy Colliding Beam Experiments

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Pentaquarks in high-energy colliding experiments: perspectives from HERA

Several issues related to pentaquark searches relevant for current and future high-energy colliding experiments are discussed. We make an attempt to explain why pentaquark candidates are not seen by some experiments, and what makes the HERA experiments so special in such searches.

متن کامل

A High Energy Proton-electron-positron Colliding Beam System*

A system of two intersecting storage rings of gross radius 260 m, one for protons and the other for electrons and positrons, is described. The maximum energy of the stored proton beam is 70 GeV, that of the electron and positron beams 15 GeV; so the center-of-mass energies are 65 GeV for e-p collisions and 30 GeV for e+ecollisions. The performance of the system is determined by the RF power ava...

متن کامل

Summary of E+e-colliding Beam Experiments*

This paper discusses recent experiments related to e+ehadrons. Subjects discussed include hadron form factors, the total hadronic cross section, multiplicities and some specific channels.

متن کامل

Semiconductor Drift Detectors: Applications and New Devices

Recent technological developments and new topology designs have made semiconductor drift detectors ideal devices for high-resolution x-ray spectrometry. In this paper the basic topology of a semiconductor drift detector with on-chip electronics specially designed for x-ray spectrometry is reviewed. These devices have been used for the first time in x-ray and g-ray spectroscopy applications. In ...

متن کامل

Radiation Damage in Silicon Detectors for High-Energy Physics Experiments

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the h...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Nuclear Science

سال: 1981

ISSN: 0018-9499

DOI: 10.1109/tns.1981.4331237